o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (201) 376-2922 (212)227-6005 fax: (201) 376-8960 designer's data sheet power field effect transistor * p-channel enhancement-mode silicon gate tmos these tmos power fets are designed for medium voltage, high speed power switching applications such as switching regu- lators, converters, solenoid and relay drivers. ? silicon gate for fast switching speeds ? switching times specified at 100c ? designer's data ? ipss- vds(on)< vgs(th) and soa specified at elevated temperature t rugged ? soa is power dissipation limited ? source-to-drain diode characterized for use with inductive loads maximum ratings thermal characteristics drain-source voltage drain-gate voltage (res = i wn) gate-source voltage ? continuous ? non-repetitive {tp ^ 50 ^s) drain current continuous pulsed total power dissipation (a tc = 25c derate above 25"c operating and storage temperature range vdss vdgr vgs vgsm id 'dm pd tj,tstg mtm or mtp 12p05 12p06 50 60 50 60 12p08 80 80 12p10 100 100 20 40 12 28 75 0.6 -65 to 150 vdc vdc vdc vpk adc watts vyrc c" MTM12P05 mtm12p06 mtm12p08 mtm12p10 mtp12p05 mtp12p06 mtp12p08 mtp12p10 tmos power fets 12 amperes fdsionl = 0-3 ohm 50, $0, 80 and 100 volts thermal resistance junction to case junction to ambient to-204 to-220 maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds rwc r?ja tl 1.67 30 62.5 275 "caw ?c MTM12P05 mtm12p06 mtm12p08 mtm12p10 to-204aa mtp12p05 mtp12p06 mtp12p08 mtp12p10 to-220ab quality semi-conductors
?xv ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (201) 376-2922 (212)227-6005 fax: (201) 376-8960 mtm/mtp12p05. 06, 08,10 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol win max unit off characteristics drain-source breakdown voltage (vgs = 0, id = 0.25 ma) mtm/mtp12p05 mtm/mtp1 2p06 mtm/mtp12p08 mtm/mtp12p10 zero gate voltage drain current . duty cycl* * 2%. quality semi-conductors
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